PART |
Description |
Maker |
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages. Schottky barrier diodes in small packages
|
NXP Semiconductors
|
BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基(双)二极 SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies] Comchip Technology
|
HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes HSCH-9101 · Beamlead GaAs Schottky barrier diodes GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|
MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA2YD23 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD) Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
CDBK0530-HF12 CDBK0530-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A SMD Schottky Barrier Diode
|
Comchip Technology
|
SB0203EJ |
Small Signal Schottky Barrier Diodes Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor Sanyo Semicon Device
|
CDBW0530-G CDBW0520L-G12 CDBW0540-G CDBW0520L-G |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=0.5A Schottky Barrier Rectifiers Diodes, V-RRM=30V, V-R=30V, I-O=0.5A Schottky Barrier Rectifiers Diodes, V-RRM=20V, V-R=20V, I-O=0.5A SMD Schottky Barrier Diodes SMD Schottky Barrier Diodes
|
Comchip Technology
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|